Category : Optics (components, coatings, instruments and systems) > Optical instrumentation, systems and accessories

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Gallium Phosphide(GaP) has an energy band gap (EG) that can emit visible light, but it is an indirect gap semiconductor. It is combined with GaAs to produce GaAs1-xPx alloy which is both direct and has a light producing energy band gap (EG) for a 0.28 ≤ x ≤ 0.45 GaP is also used in manufacturing light-emitting diodes (LEDs). It can emit green light.
InP wafers are attracting much attention as a key component in optical fiber communications equipment. Specifically, the semi-insulating InP mirror wafer is expected to become the mainstream material for photodiodes used in a high-speed communications system with a transmission speed of 40 Gbps or higher. Demand for InP is also expected to grow for use in the next-generation mobile phones, which require communications with higher speed and larger capacity.

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- Semiconductor single crystals
- Crystal quartz for fabrication of finished optics
- Undoped Yttrium Aluminium Garnet
- Non-linear crystal Mercury Thiogallate

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- Newport Introduces the 1936-C and 2936-C Benchtop Optical Power and Energy Meters
- Iris Diaphragms
- Newport introduces 1918-C Handheld Optical Power and Energy Meter
- Safety Machine Windows
- Adaptors for coaxial incident light
- Modular directed lighting

List of all articles in this sub-category Optical instrumentation, systems and accessories

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