Category : Laser components, systems, equipment and applications > Diode lasers

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Gallium-nitride (GaN) laser diodes were a major innovation of the late 90's. They have significantly extended the wavelength range accessible to semiconductor laser diodes towards the lower end of the visible spectrum. They are poised for volume production with the advent of next-generation optical storage technologies. Today, GaN diodes are achieving power levels of tens of milliwatts. They are therefore credible replacements for older laser technologies in the 375 nm to 445 nm wavelength range.

However, getting a fully adapted laser product out of a GaN laser diode requires a set of optical, electronics and integration skills. Indeed, a wide variety of problems have to be addressed and these include beam shaping, diode lifetime optimization, thermal management, diode current regulation, sensitivity to ESD phenomena, etc.


With the Oxxius Violet product platform, Oxxius solved these issues for its customers and offers a fully managed off-the-shelf GaN diode in an easy-to-use and compact laser module.

Oxxius Violet is available today at 375 nm, 405 nm and 445 nm. System integrators will choose the OEM version while academic users usually select the Plug & Play version, fitted with a power supply and the security devices required by laser safety standards.

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List of all articles in this sub-category Diode lasers

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