Category : Semiconductor equipment > Semiconductor components and instrumentations

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Polycrystalline ingots are produced by reacting of Ga and As (at least 99.9999 % pure) together in PBN crucible at high inert gas pressure and subsequent pulling by LEC technique in low inert gas pressure furnace

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- Optical Grade Gallium Arsenide
- Silicon-Cobalt alloy
- Sputtering targets for thin film and coating applications
- HB poly GaAs

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- nTELLECT infeed rotary surface grinder for semiconductor wafers
- HB poly GaAs
- Lütze Semiconductor Relay Modules
- Dynamic I-V analyzer

List of all articles in this sub-category Semiconductor components and instrumentations

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