THz Spectroscopy Kit

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The terahertz (THz) and sub-THz frequency region (100 GHz – 10 THz) of the electromagnetic spectrum bridges the gap between the microwaves and infrared. The “THz gap” is very attractive because of many possible applications of terahertz radiation: spectroscopy and imaging of biological objects, and novel communication systemsTHz emitter and THz detector consists of a microstrip antenna integrated with LTG-GaAs photoconductor and THz lens, both mounted on X-Y stage. Performance of photoconductive antennae, used as THz emitters and detectors, depends on carrier mobilities and their trapping times in semiconductor layers of the antenna. Low-temperature grown GaAs (LTG-GaAs) is one of the best materials for THz applications because of high carrier mobility, fast carrier capture time, high breakdown voltage and high resistivity. A technology of LTG-GaAs grow allows to control the photoexcited carrier lifetime within a very wide region: from less than ~100 fs to 100 ps. Photoconductor antennae geometry, parameters of the THz lenses, as well as the properties of LTG-GaAs epitaxial layers were optimized for highest THz radiation output efficiency while preserving optimal bandwidth.

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